Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 90 ns (typ.)Specifications Parameter Symbol Rating Unit Collector to Base Voltage VCBO -5 V ...
2SA2060: Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 90 ns (...
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| Parameter | Symbol | Rating | Unit | |
| Collector to Base Voltage | VCBO | -5 | V | |
| Collector to Emitter Voltage | VCEO | -50 | V | |
| Emitter to Base Voltage | VEBO | -7 | V | |
| Collect Current | DC | IC | -2.0 | A |
| Pulse | ICP | -3.5 | A | |
| Base current | IB | -200 | mA | |
| Collector power dissipation |
t = 10 s | PC(Note1) | 2.5 | W |
| DC |
1.0 | |||
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||