Features: ·High DC current gain: hFE = 200 to 500 (IC = −0.15 A)·Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)·High-speed switching: tf = 37 ns (typ.)Application·High DC current gain: hFE = 200 to 500 (IC = −0.15 A)·Low collector-emitter saturation voltage: ...
2SA2065: Features: ·High DC current gain: hFE = 200 to 500 (IC = −0.15 A)·Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)·High-speed switching: tf = 37 ns (typ.)Application·Hi...
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|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-base voltage |
VCBO |
−20 |
V | |
| Collector-emitter voltage |
VCEO |
−20 |
V | |
| Emitter-base voltage |
VEBO |
−7 |
V | |
| Collector current |
DC |
IC |
−1.5 |
A |
|
Pulse |
ICP |
−2.5 | ||
| Base current |
IB |
−150 |
mA | |
| Collector power dissipation |
t = 10s |
PC (Note 1) |
750 |
mW |
|
DC |
500 | |||
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
−55 to 150 |
||