Transistors Bipolar (BJT) BIP PNP 2A 50V
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
| Emitter- Base Voltage VEBO : | - 6 V | DC Collector/Base Gain hfe Min : | 200 mA |
| Mounting Style : | Through Hole | Package / Case : | TO-92 |
| Packaging : | Bulk |

| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 2 |
| PC [W] | 1 |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.1 |
| VCE (sat) typ [V] | 0.2 |
| VCE (sat) max [V] | 0.4 |
| IC [A] | 1 |
| IB [mA] | 50 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
-50 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
-50 |
V | |
| Emitter-to-Base Voltage |
VEBO |
-6 |
V | |
| Collector Current |
IC |
-2 |
A | |
| Collector Current (Pulse) |
ICP |
-4 |
A | |
| Base Current |
IB |
-400 |
mA | |
| Collector Dissipation |
PC |
1 |
W | |
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature |
Tstg |
-55 to +150 |