Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching applications (switching regulators, drive circuit).PinoutSpecifications Parameter Symbol Co...
2SA2179: Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switchin...
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| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | -50 | V | |
| Collector-to-Emitter Voltage | VCEO | -50 | V | |
| Emitter-to-Base Voltage | VEBO | -6 | V | |
| Collector Current | IC | -13 | A | |
| Collector Current (Pulse) | ICP | -15 | A | |
| Base Current | IB | -2 | A | |
| Collector Dissipation | PC | 2 | W | |
| Tc=25 | 25 | W | ||
| Channel Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 13 |
| PC Tc=25°C [W] | 25 |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 500 |
| VCE [V] | 2 |
| IC [A] | 0.27 |
| VCE (sat) max [V] | 0.5 |
| IC [A] | 6 |
| IB [A] | 0.3 |
| fT typ [MHz] | 110 |