2SA2210

Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Series: *
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Frequency - Transition: 140MHz
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Packaging: Bulk
Manufacturer: ON Semiconductor
Package / Case: TO-220-3 Full Pack
Current - Collector (Ic) (Max): 20A
Supplier Device Package: TO-220ML
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A


Features:

• Adoption of MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.




Application

• Relay drivers, lamp drivers, motor drivers.




Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-base Voltage	VCBO		-50	V
Collector-to-emitter Voltage	VCEO		-50	V
Emitter-base Voltage	VEBO		-6	V
Collector Current	IC		-20	A
Collector Current (Pulse)	ICP		-25	A
Base Current	IB		-3	A
Collector Dissipation	PC		2	W
		Tc=25	30	W
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55 to +150

Absolute maximum ratings
VCEO [V]	50
IC [A]	20
PC Tc=25°C [W]	30

Electrical characteristics
hFE min	150
hFE max	450
VCE [V]	2
IC [A]	1
VCE (sat) max [V]	500
IC [A]	7
IB [A]	0.35
fT typ [MHz]	140