MFG:Other Category:Other
Category: Other
MFG: Other
Description: The 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD.
The feature of the 2SA812-T1B-A are:...
The 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD.
The feature of the 2SA812-T1B-A are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = -1.0 mA) ) ; (3)High Voltage: VCEO = -50 V .
The absolute maximum ratings of the 2SA812-T1B-A can be summarized as:(1)Collector to Base Voltage: -60 V ; (2)Collector to Emitter Voltage : -50 V ; (3)Emitter to Base Voltage:-5.0 V ; (4)Collector Current (DC) : -100 mA ; (5)Total Power Dissipation : 200 mW ; (6)Junction Temperature : 150 °C ; (7)Storage Temperature Range : -55 to +150 °C.
The electrical characteristics at TA=25°C of the 2SA812-T1B-A can be summarized as:(1)Collector Cutoff Current ICBO: -0.1 A MAX; (2)Emitter Cutoff Current IEBO:-0.1 A MAX ; (3)DC Current Gain hFE :90 MIN 200 TYP 600 MAX ; (4)Collector Saturation Voltage VCE(sat):-0.18V TYP -0.3 V MAX; (5)Base to Emitter Voltage VBE :-0.58V MIN -0.62 TYP -0.68 V MAX ; (6)Gain Bandwidth Product fT: 180 MHz TYP; (7)Output Capacitance Cob : 4.5 pF TYP .If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .
2SA0683
PDF/DataSheet Download
The 2SA812-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)High Voltage: VCEO = -50 V. Also this devi...
The 2SA812-M6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)High Voltage: VCEO = -50 V. Also this devi...
The 2SA812A-T1B-AM7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is de...
The 2SA812A-T1B-AM6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is de...
The 2SA812A-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is designe...
The 2SA812A-M6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is designe...
Price: 1-1 USD
Linear Optocoupler, DIP, 160 mW, 250 mA, High Gain Stability, Low Input-Output Capacitance, Low Po...
Price: 1.5-2.5 USD
low power, complete analog, 16/24-bit, Sigma-Delta ADC, –0.3 V to +7 V, 10 mA, SOP, 80 nV
Price: 0.2-0.3 USD
Surface Mount, Schottky Power Rectifier, 40V, 5A, RoHS Non-Compliant, Fast Recovery
Price: 1-10000000 USD
M-Systems, Disk OnChip, DIP-32, 3.3V, 5V, 16MB to 576MB
Price: 6-8 USD
V25TM 16/8-BIT SINGLE-CHIP MICROCONTROLLER
Price: 45.5-48.5 USD
6MBP75RH060-01, IGBT module, Fuji Electric, 1200V, 75A
Price: 28-32 USD
Current Transducer, 25At, 5V
Price: 0.2-0.45 USD
TPS9126PWR, TSSOP, Texas Instruments
Price: 0.4-0.8 USD
dual pulse-width-modulation control circuit, SOP, 51V, 21mA, Wide Supply Voltage Range
Price: 1.4-1.55 USD
16bit, 16MHz, 68PLCC, microcontroller, 0.5V to +7.0V, Intel Corporation, EE80C196KB16
Price: 18-20 USD
MICROWAVE POWER TRANSISTORS MRF1015MA
Price: 5-8 USD
64-lead LQFP, single-chip codec, Single 3.3 V supply
