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2SA812-T1B-A

DescriptionThe 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD. The feature of the 2SA812-T1B-A are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = -1.0 mA) ) ; (3)High Voltage: VCEO = -50 V . The absolute maximum ratings of the 2SA812-T1B-...

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SeekIC No. : 004220583 Detail

2SA812-T1B-A: DescriptionThe 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD. The feature of the 2SA812-T1B-A are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V...

2SA812-T1B-A Data Sheet

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Part Number:
2SA812-T1B-A
Supply Ability:
5000

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  • 1~5000
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Description

The 2SA812-T1B-A is a PNP SILICON  EPITAXIAL  TRANSISTOR MINI  MOLD.

The feature of the 2SA812-T1B-A  are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = -1.0 mA) ) ; (3)High Voltage:  VCEO = -50 V .

The absolute maximum ratings of the 2SA812-T1B-A can be summarized as:(1)Collector to Base Voltage: -60 V ; (2)Collector to Emitter Voltage : -50 V ; (3)Emitter to Base Voltage:-5.0 V ; (4)Collector Current (DC) : -100 mA ; (5)Total Power Dissipation : 200 mW ; (6)Junction Temperature : 150  °C ; (7)Storage Temperature Range : -55 to +150  °C.

The electrical characteristics at TA=25°C of the 2SA812-T1B-A can be summarized as:(1)Collector Cutoff Current ICBO: -0.1 A MAX; (2)Emitter Cutoff Current IEBO:-0.1  A MAX ; (3)DC Current Gain hFE :90 MIN 200 TYP 600 MAX ; (4)Collector Saturation Voltage VCE(sat):-0.18V TYP  -0.3 V MAX; (5)Base to Emitter Voltage VBE :-0.58V MIN  -0.62 TYP  -0.68 V MAX ; (6)Gain Bandwidth Product fT:  180  MHz TYP; (7)Output Capacitance Cob : 4.5  pF TYP .If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .




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