The 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD.
The feature of the 2SA812-T1B-A are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = -1.0 mA) ) ; (3)High Voltage: VCEO = -50 V .
The absolute maxim...
The 2SA812-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)High Voltage: VCEO = -50 V. Also this devi...