2SA817

Parameter	Symbol	Rating	Unit
Collector-base Voltage	VCBO	-80	V
Collector-emitter Voltage	VCEO	-80	V
Emitter-base Voltage	VEBO	-5	V
Collector Current	IC	-300	mA
Base Current	IB	-60	mA
Collector Power Dissipation	PC	600	mW
Jumction temperature	Tj	150
Storage temperature Range	Tstg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within 
          the absolute maximum ratings.

          Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
          Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data
          (i.e. reliability test report and estimated failure rate, etc).