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2SA970

Application• Low noise : NF = 3dB (typ.) RG = 100 , VCE = −6 V, IC = −100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 k, VCE = −6 V, IC = −100 A, f = 1 kHz• High DC current gain: hFE = 200~700• High breakdown voltage: VCEO = −120 V• Low pulse noise...

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2SA970: Application• Low noise : NF = 3dB (typ.) RG = 100 , VCE = −6 V, IC = −100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 k, VCE = −6 V, IC = −100 A, f = 1 kHz• High DC c...

2SA970 Data Sheet

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Part Number:
2SA970
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5000

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Product Details

Description



Application

• Low noise : NF = 3dB (typ.) RG = 100 , VCE = −6 V, IC = −100 A, f = 1 kHz
                   : NF = 0.5dB (typ.) RG = 1 k, VCE = −6 V, IC = −100 A, f = 1 kHz
• High DC current gain: hFE = 200~700
• High breakdown voltage: VCEO = −120 V
• Low pulse noise. Low 1/f noise


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO -120 V
Collector-emitter voltage VCEO -120 V
Emitter-base voltage VEBO -5 V
Collector Current IC -100 mA
Base Current IB -20 mA
Collector power dissipation PC 300 mW
Junction Temperature Tj 125
Storage Temperature Range Tstg -55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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