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2SB1016A

Features: • High breakdown voltage: VCEO = −100 V• Low collector-emitter saturation voltage: V CE (sat) = −2.0 V (max)• Complementary to 2SD1407ASpecifications PARAMETER SYMBOL Rating UNIT Collector-base voltage VCBO -100 V Collector-emi...

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2SB1016A: Features: • High breakdown voltage: VCEO = −100 V• Low collector-emitter saturation voltage: V CE (sat) = −2.0 V (max)• Complementary to 2SD1407ASpecifications P...

2SB1016A Data Sheet

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Part Number:
2SB1016A
Supply Ability:
5000

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Product Details

Description



Features:

• High breakdown voltage: VCEO = −100 V
• Low collector-emitter saturation voltage: V CE (sat) = −2.0 V (max)
• Complementary to 2SD1407A


Specifications

PARAMETER
SYMBOL
Rating
UNIT
Collector-base voltage
VCBO
-100
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-5
A
Base current
IB
-0.5
A
Collectorl power dissipation (Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.


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