2SB1030A

Series: -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Power - Max: 300mW
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 1µA
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Package / Case: NS-B1
Supplier Device Package: NS-B1
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V


Features:

Optimum for high-density mounting.
 Allowing supply with the radial taping.


Application

For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A


Specifications

Parameter		Symbol	Limits	Unit
Collector to base voltage	2SB1030	VCBO	30	V
	2SB1030A		−60
Collector to emitter voltage	2SB1030	VCEO	25	V
	2SB1030A		−50
Emitter to base voltage		VEBO	−7	V
Peak collector current		ICP	−1	A
Collector current		IC	−0.5	A
Collector Power dissipation		PC	300	mW
Junction Temperation		Tj	150
Storage Temperation		Tstg	−55 to +150

Parameters:

Technical/Catalog Information	2SB1030A
Vendor	Panasonic - SSG (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	85 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	600mV @ 30mA, 300mA
Frequency - Transition	120MHz
Current - Collector Cutoff (Max)	1A
Mounting Type	Through Hole
Package / Case	NS-B1
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SB1030A 2SB1030A 2SB1030ACT ND 2SB1030ACTND 2SB1030ACT