2SB1109

The 2SB1109 is designed as one kind of PNP / NPN epitaxial planar silicon transistor. The absolute maximum ratings of the 2SB1109 can be summarized as:(1)collctor to base voltage: -160 V;(2)collector to emitter voltage: -160 V;(3)emitter to base voltage: -5.0 V;(4)collector current: -100 mA;(5)collector dissipation: 1.25 W;(7)junction temperature: 150 ;(8)storage temperature range: -45 to +150 .

And the electrical characteristics of the 2SB1109 can be summarized as:(1)collector to base breakdown voltage: -160 V;(2)collector to emitter breakdown voltage: -160 V;(3)emitter to base breakdown voltage: -5 V;(4)collector cutoff current: -10 uA;(5)DC current transfer ratio: 60;(6)base to emitter voltage: -1.5 V;(7)clooector to emitter saturation voltage: -2 V;(8)gain bandwidth product: 140 MHz;(9)collector output capacotance: 5.5 pF. If you want to know more information such as the electrical characteristics about the 2SB1109, please download the datasheet in www.seekic.com or www.chinaicmart.com .