Features: `Adoption of FBET process..`Very small size making it easy to provide highdensity hybrid IC's.PinoutSpecifications Absolute maximum ratings VCEO [V] 50 IC [A] 1 PC [W] 1.3 When mounted on ceramic substrate (250mm²*0.8mm) 1unit Electrical char...
2SB1122: Features: `Adoption of FBET process..`Very small size making it easy to provide highdensity hybrid IC's.PinoutSpecifications Absolute maximum ratings VCEO [V] 50 IC [A] 1 PC ...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 1 |
| PC [W] | 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.1 |
| VCE (sat) typ [V] | 0.18 |
| VCE (sat) max [V] | 0.5 |
| IC [A] | 0.5 |
| IB [mA] | 50 |
| Parameter | Symbol | Rating | UNIT |
| Collector-base voltage | VCBO | -60 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -1 | A |
| Collector current (pulse) | ICP | -2 | A |
| Collector power dissipation | PC | 500 | mW |
| Jumction temperature | Tj | 150 | |
| Storage temperature | Tstg | -55 to +150 |