Features: • Adoption of FBET, MBIT processes.
• Low collector-to-emitter saturation voltage.
• Large current capacity and wide ASO.
• Fast switching speed.
• The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC's further miniaturization.
Application• Voltage regulators, relay drivers, lamp drivers, electrical equipment.Pinout
Specifications
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
|
()60 |
V |
|
Collector-to-Emitter Voltage |
VCEO |
|
()50 |
V |
|
Emitter-to-Base Voltage |
IEBO |
|
()6 |
V |
|
Drain Current |
IC |
|
()2 |
A |
|
Collector Current (Pulse) |
ICP |
|
()4 |
A |
|
Allowable Power Dissipation |
PD |
|
0.5 |
W |
|
|
1.3 |
W |
|
Channel Temperature |
Tj |
|
150 |
°C |
|
Storage Temperature |
Tstg |
|
55 to +150 |
°C |
| Absolute maximum ratings |
| VCEO [V] |
50 |
| IC [A] |
2 |
| PC [W] |
1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
| Electrical characteristics |
| hFE min |
100 |
| hFE max |
560 |
| VCE [V] |
2 |
| IC [A] |
0.1 |
| VCE (sat) typ [V] |
0.3 |
| VCE (sat) max [V] |
0.7 |
| IC [A] |
1 |
| IB [mA] |
50 |
DescriptionThe 2SB1123 is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)large current capacity and wide ASO;(4)fast switching speed;(5)very small size making it easy to provide high-density, small-sized hybrid IC's.
The absolute maximum ratings of the 2SB1123 can be summarized as:(1)collector-base voltage: -60 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -6 V;(4)collector current: -2 A;(5)collector power dissipation: 1.3 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -60 V;(2)collector-emitter breakdown voltage: -50 V;(3)emitter-base breakdown voltage: -6 V;(4)collctor cutoff current: -100 nA;(5)emitter cutoff current: -100 nA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 100 to 560;(8)transition frequency: 150 MHz;(9)output capacitance: 12 pF. If you want to know more information such as the electrical characteristics about the 2SB1123, please download the datasheet in www.seekic.com or www.chinaicmart.com.
2SB1123 Data Sheet
