2SB1132-x-AB3-R Selling Leads, Price trend, 2SB1132-x-AB3-R DataSheet download, circuit diagram from SeekIC.com

Features: * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)Specifications Parameter Symbol Rating UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current DC IC -1 A Collector curren...

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2SB1132-x-AB3-R: Features: * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)Specifications Parameter Symbol Rating UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO ...

2SB1132-x-AB3-R Data Sheet

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Part Number:: 2SB1132-x-AB3-R
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

Description

Features:

* Low V_CE(SAT).
V_CE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)

Specifications

Parameter		Symbol	Rating	UNIT
Collector-base voltage		V_CBO	-40	V
Collector-emitter voltage		V_CEO	-32	V
Emitter-base voltage		V_EBO	-5	V
Collector current	DC	I_C	-1	A
Collector current Single pulse, Pw=100ms	PULSE	I_C	-2	A
Collector power dissipation	SOT-89	P_C	0.5	W
Collector power dissipation	TO-252	P_C	1	W
Jumction temperature		T_j	150
Storage temperature		T_stg	-55 to +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. 􀀁 􀀁 􀀁 􀀁 􀀁 􀀁
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Description

The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.

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2SB1132-x-AB3-R

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