2SB1132T100Q

Transistors Bipolar (BJT) PNP 32V 1A SO-89

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SeekIC No. : 00206553 Detail

2SB1132T100Q: Transistors Bipolar (BJT) PNP 32V 1A SO-89

floor Price/Ceiling Price

US $ .08~.3 / Piece | Get Latest Price
Part Number:
2SB1132T100Q
Mfg:
ROHM Semiconductor
Supply Ability:
5000

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : - 32 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 82 Configuration : Single Dual Collector
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-89
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Package / Case : SOT-89
Emitter- Base Voltage VEBO : - 5 V
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 150 MHz
Configuration : Single Dual Collector
Collector- Emitter Voltage VCEO Max : - 32 V
DC Collector/Base Gain hfe Min : 82


Description

The 2SB1182 is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1858..

The absolute maximum ratings of the 2SB1182 can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -1 or -2 A;(5)collector power dissipation: 1 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 150 MHz;(9)output capacitance: 20 to 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1182, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SB1132T100Q
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)32V
Current - Collector (Ic) (Max)1A
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-62, SOT-89, MPT3 (3 leads + Tab)
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SB1132T100Q
2SB1132T100Q
2SB1132T100QDKR ND
2SB1132T100QDKRND
2SB1132T100QDKR



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