2SB1135R

The 2SB1135R is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 7 A high speed switching applications. Features of the 2SB1135R are:(1)low saturation collector-to-emitter voltage: VCE(sat) = -0.4 V max;(2)high breakdown voltage;(3)low saturation voltage;(4)large current capacity and wide ASO. And this device can be used in relay drivers, high-speed inverters, converters and other general high-current switching applications.

The absolute maximum ratings of the 2SB1135R can be summarized as:(1)collector-to-base voltage: 60 V;(2)collector-to-emitter voltage: 50 V;(3)emitter-to-base voltage: 6 V;(4)collector current: 12 A;(5)collector current (pulse): 15 A;(6)collector dissipation: 2 W;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SB1135R can be summarized as:(1)collector cutoff current: 0.1 mA;(2)emitter cutoff current: 0.1 mA;(3)DC current gain: 70 to 280;(4)gain bandwidth product: 10 MHz;(5)storage time: 0.9 us;(6)C-E saturation voltage: 400 mV;(7)B-E saturation voltage: 6 V. If you want to know more information such as the electrical characteristics about the 2SB1135R, please download the datasheet in www.seekic.com or www.chinaicmart.com .