2SB1141-T

The 2SB1141-T is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 18 V / 1.2 A high speed switching applications. Features of the 2SB1141-T are:(1)adoption of FBET and MBIT processes;(2)high breakdown voltage;(3)low saturation voltage;(4)large current capacity and wide ASO.

The absolute maximum ratings of the 2SB1141-T can be summarized as:(1)collector-to-base voltage: 20 V;(2)collector-to-emitter voltage: 18 V;(3)emitter-to-base voltage: 5 V;(4)collector current: 1.2 A;(5)collector current (pulse): 2.0 A;(6)collector dissipation: 1.5 W;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SB1141-T can be summarized as:(1)collector cutoff current: 100 nA;(2)emitter cutoff current: 100 nA;(3)DC current gain: 70 to 400;(4)gain bandwidth product: 150 MHz;(5)output capacitance: 20 pF;(6)C-E saturation voltage: 120 to 300 mV;(7)B-E saturation voltage: 0.85 to 1.2 V. If you want to know more information such as the electrical characteristics about the 2SB1141-T, please download the datasheet in www.seekic.com or www.chinaicmart.com .