2SB1182

The 2SB1182 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / 2SD1862.

The absolute maximum ratings of the 2SB1182 can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -2 A;(5)collector power dissipation: 1 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -1 uA;(5)emitter cutoff current: -1 uA;(6)collector-emitter saturation voltage: -0.5 to -0.8 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 100 MHz;(9)output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about the 2SB1182, please download the datasheet in www.seekic.com or www.chinaicmart.com.