2SB1182TLQ

Transistors Bipolar (BJT) D-PAK;BCE PNP;DRIVER SMT HFE RANK Q

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SeekIC No. : 00206552 Detail

2SB1182TLQ: Transistors Bipolar (BJT) D-PAK;BCE PNP;DRIVER SMT HFE RANK Q

floor Price/Ceiling Price

US $ .24~.61 / Piece | Get Latest Price
Part Number:
2SB1182TLQ
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.61
  • $.47
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  • $.24
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : - 32 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 82 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Package / Case : DPAK
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : - 32 V
DC Collector/Base Gain hfe Min : 82


Specifications

  Connection Diagram


Description

The 2SB1182TLQ is one member of the 2SB1182 family which is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / 2SD1862.

The absolute maximum ratings of the 2SB1182TLQ can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -2 A;(5)collector power dissipation: 1 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -1 uA;(5)emitter cutoff current: -1 uA;(6)collector-emitter saturation voltage: -0.5 to -0.8 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 100 MHz;(9)output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about the 2SB1182TLQ, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SB1182TLQ
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)32V
Current - Collector (Ic) (Max)2A
Power - Max10W
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SB1182TLQ
2SB1182TLQ
2SB1182TLQCT ND
2SB1182TLQCTND
2SB1182TLQCT



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