2SB1186

The 2SB1186 is designed as one kind of power transistor (-120 V, -1.5 A) that has four points of features:(1)high breakdown voltage (BVCEO= -120 V);(2)low collector output capacitance (typ. 30pF at VCB= -10 V);(3)high transition frequency (fT= 50 MHz);(4)complements the 2SD1857 / 2SD1763.

The absolute maximum ratings of the 2SB1186 can be summarized as:(1)collector-base voltage: -120 V;(2)collector-emitter voltage: -120 V;(3)emitter-base voltage: -5 V;(4)collector current: -1.5 A (DC) and -3 A (pulse);(5)collector power dissipation: 20 W (Tc=25);(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 . If you want to know more information such as the electrical characteristics about the 2SB1186, please download the datasheet in www.seekic.com or www.chinaicmart.com .