2SB1186A

The 2SB1186A is one member of the 2SB1186 family which is designed as the silicon PNP power transistor device that has four points of features:(1)With TO-220Fa package; (2)Low collector saturation votlage; (3)Complement to type 2SD1763A; (4)High breakdown voltage. And this device can be used in low frequency power amplifer applications.

The absolute maximum ratings of the 2SB1186A can be summarized as:(1)Collector-base voltage: -160 V;(2)Collector-emitter voltage: -160 V;(3)Emitter-base voltage: -5 V;(4)Collector current: -1.5 A;(5)Collector power dissipation: 2.0 or 20 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 ;(8)Collector current-peak: -3.0 A.

The electrical characteristics of 2SB1186A can be summarized as:(1)Collector-base breakdown voltage: -160 V;(2)Collector-emitter breakdown voltage: -160 V;(3)Emitter-base breakdown voltage: -5 V;(4)Collector cutoff current: -1.0 uA;(5)Emitter cutoff current: -1.0 uA;(6)DC current gain: 60 to 200;(7)Collector-emitter saturation voltage: -2.0 V;(8)Transition frequency: 50 MHz. If you want to know more information such as the electrical characteristics about the 2SB1186A, please download the datasheet in www.seekic.com or www.chinaicmart.com.