Features: *High current output up to 3A*Low saturation voltageSpecifications PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Collector current ICM ...
2SB1188: Features: *High current output up to 3A*Low saturation voltageSpecifications PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Volta...
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PARAMETER |
SYMBOL |
RATINGS |
UNIT |
Collector-Base Voltage |
VCBO |
-40 |
V |
Collector-Emitter Voltage |
VCEO |
-30 |
V |
Emitter-Base Voltage |
VEBO |
-5 |
V |
Peak Collector current |
ICM |
7 |
A |
DC Collector Current |
IC |
-3 |
A |
Base Current |
IB |
-0.6 |
A |
Power Dissipation |
PD |
0.5 |
W |
Junction Temperature |
TJ |
+150 |
.. |
Storage Temperature |
TSTG |
-40 ~ +150 |
.. |
The 2SB1188 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / 2SD1862.
The absolute maximum ratings of the 2SB1188 can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -2 A;(5)collector power dissipation: 0.5 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -1 uA;(5)emitter cutoff current: -1 uA;(6)collector-emitter saturation voltage: -0.5 to -0.8 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 100 MHz;(9)output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about the 2SB1188, please download the datasheet in www.seekic.com or www.chinaicmart.com.