2SB1197KRLT1G

The 2SB1197KRLT1G is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial planar type;(3)NPN complement: L2SD1781K;(4)Pb-Free Package is available.

The absolute maximum ratings of the 2SB1197KRLT1G can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -0.8 A;(5)collector power dissipation: 0.2 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 120 to 390;(8)transition frequency: 200 MHz;(9)output capacitance: 12 to 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1197KRLT1G, please download the datasheet in www.seekic.com or www.chinaicmart.com.