2SB1198K

The 2SB1198K is designed as one kind of low-frequency transistor device that has some points of features:(1)Low VCE(sat). VCE(sat) = -0.20 V (typ.) (IC / IB = -0.5 A / -50 mA);(2)High breakdown voltage BVCEO = -80 V;(3)Complements the 2SD1782K.

The absolute maximum ratings of the 2SB1198K can be summarized as:(1)collector-base voltage: -80 V;(2)collector-emitter voltage: -80 V;(3)emitter-base voltage: -5 V;(4)collector current: -0.5 A;(5)collector power dissipation: 0.2 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -80 V;(2)collector-emitter breakdown voltage: -80 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 120 to 390;(8)transition frequency: 180 MHz;(9)output capacitance: 11 pF. If you want to know more information such as the electrical characteristics about the 2SB1198K, please download the datasheet in www.seekic.com or www.chinaicmart.com.