2SB1235N

The 2SB1235N is designed as one kind of silicon PNP epotaxial type that has three points of features:(1)AF amplifier, solenoid drivers, LED drivers;(2)darlington connection;(3)high DC current gain.

The absolute maximum ratings of the 2SB1235N can be summarized as:(1)collector-base voltage: -80 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -10 V;(4)collector current: -200 mA;(5)collector power dissipation: 300 mW;(6)junction temperature: 150 ;(7)storage tmeperature range: -55 to +150 .

And the electrical characteristics of the 2SB1235N can be summarized as:(1)collector cut-off current: -100 nA;(2)emitter cut-off current: -100 nA;(3)collector-emitter breakdown voltage: -100 V;(4)DC current gain: 5000;(5)collector-emitter saturation voltage: -0.9 to -1.5 V;(6)base-emitter saturation voltage: -1.5 to -2.0 V. If you want to know more information such as the electrical characteristics about the 2SB1235N, please download the datasheet in www.seekic.com or www.chinaicmart.com .