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SeekIC No. : 003436862 Detail

2SB1375(F): TRANSISTOR PNP 60V 3A TO220NIS

2SB1375(F) Data Sheet

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Part Number:: 2SB1375(F)
Mfg:
Supply Ability:: 5000

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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
Transistor Type:	PNP	Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	1.5V @ 200mA, 2A
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 5V	Power - Max:	2W
Frequency - Transition:	9MHz	Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack	Supplier Device Package:	TO-220NIS

Description

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 60V
Mounting Type: Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Power - Max: 2W
Packaging: Bulk
Manufacturer: Toshiba
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS
Frequency - Transition: 9MHz
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A

Parameters:

Technical/Catalog Information	2SB1375(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 200mA, 2A
Frequency - Transition	9MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SB1375 F 2SB1375F

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2SB1375(F)

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