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2SB1386

Features: * Excellent DC current gain characteristics* Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)Specifications PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Collector-Emitter Voltage VEBO -6 V Collect...

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SeekIC No. : 004221025 Detail

2SB1386: Features: * Excellent DC current gain characteristics* Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)Specifications PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -3...

2SB1386 Data Sheet

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Part Number:
2SB1386
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Excellent DC current gain characteristics
* Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)


Specifications

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -20 V
Collector-Emitter Voltage VEBO -6 V
Collector Current (DC) IC(DC) -5 A
Collector Current (Pulse)(Note1) IC(PULSE) -10 A
Collector Power Dissipation PC 0.5 W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Note 1. Single pulse, Pw=10ms
        2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
            Absolute maximum ratings are stress ratings only and functional device operation is not implied.


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