2SB1386T100R

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Package / Case : SOT-89
Emitter- Base Voltage VEBO : - 6 V
Maximum DC Collector Current : 5 A
Maximum Operating Frequency : 120 MHz
Collector- Emitter Voltage VCEO Max : - 20 V
DC Collector/Base Gain hfe Min : 82


Description

The 2SB1386T100R is designed as one kind of low VCE(sat) transistor device that has some points of features:(1)Low VCE(sat). VCE(sat) = -0.35V (typ.) (IC / IB = -4 A / -0.1 A);(2)Excellent DC current gain characteristics;(3)Complements the 2SD2098 / 2SD2118.

The absolute maximum ratings of the 2SB1386T100R can be summarized as:(1)collector-base voltage: -30 V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -5 A;(5)collector power dissipation: 0.5 or 2 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -30 V;(2)collector-emitter breakdown voltage: -20 V;(3)emitter-base breakdown voltage: -6 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -1.0 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 120 MHz;(9)output capacitance: 60 pF. If you want to know more information such as the electrical characteristics about the 2SB1386T100R, please download the datasheet in www.seekic.com or www.chinaicmart.com.

The 2SB1386T100R is the member of the 2SB1386 family which is designed as one kind of low frequency transistor (-20V, -5A) that has three points of features:(1)low saturation voltage, typically VCE(sat)=-0.35 V at Ic / IB = -4A / -0.1A ;(2)excellent DC current gain characteristics;(3)complements the 2SD2098. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD1898R can be summarized as:(1)collector-base voltage: -30 V V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -5 A or -10 A;(4)junction temper-ature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SB1386T100R can be summarized as:(1)collector-base breakdown voltage: -30 V;(2)collector-emitter breakdown voltage: -20 V;(3)emitter cutoff current: -0.5 A;(4)collector-emitter saturation voltage: -1.0 V;(5)DC current transfer ratio: 82 to 390;(6)transition frequency: 120 MHz;(7)output capacitance: 60 pF. If you want to know more information such as the electrical characteristics about the 2SB1386T100R, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	2SB1386T100R
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	20V
Current - Collector (Ic) (Max)	5A
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 4A
Frequency - Transition	120MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SC-62, SOT-89, MPT3 (3 leads + Tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SB1386T100R 2SB1386T100R 2SB1386T100RDKR ND 2SB1386T100RDKRND 2SB1386T100RDKR