2SB1386 R

The 2SB1386R is designed as one kind of low VCE(sat) transistor device that has some points of features:(1)Low VCE(sat). VCE(sat) = -0.35V (typ.) (IC / IB = -4 A / -0.1 A);(2)Excellent DC current gain characteristics;(3)Complements the 2SD2098 / 2SD2118.

The absolute maximum ratings of the 2SB1386R can be summarized as:(1)collector-base voltage: -30 V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -5 A;(5)collector power dissipation: 0.5 or 2 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -30 V;(2)collector-emitter breakdown voltage: -20 V;(3)emitter-base breakdown voltage: -6 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -1.0 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 120 MHz;(9)output capacitance: 60 pF. If you want to know more information such as the electrical characteristics about the 2SB1386R, please download the datasheet in www.seekic.com or www.chinaicmart.com.