Features: ·Adoption of FBET,MBIT processes·Large current capacity·Low collector to emitter saturation voltagePinoutSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCBO -15 V Collector-base voltage VCEO -10 V Emitter to base Voltage VEBO -7 V Colle...
2SB1396: Features: ·Adoption of FBET,MBIT processes·Large current capacity·Low collector to emitter saturation voltagePinoutSpecifications Parameter Symbol Rating Unit Collector-emitter voltage V...
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| Parameter | Symbol | Rating | Unit |
| Collector-emitter voltage | VCBO | -15 | V |
| Collector-base voltage | VCEO | -10 | V |
| Emitter to base Voltage | VEBO | -7 | V |
| Collector current | IC | -3 | A |
| Collector current (Pulse) | ICP | -5 | A |
| Collector dissipation * | PC* | 1.3 | W |
| Jumction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 10 |
| IC [A] | 3 |
| PC [W] | 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
| Electrical characteristics | |
|---|---|
| hFE min | 140 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.5 |
| VCE (sat) typ [V] | 0.22 |
| VCE (sat) max [V] | 0.4 |
| IC [A] | 1.5 |
| IB [mA] | 30 |