2SB1417

DescriptionThe 2SB1417 is a type of power transistor,which is silicon PNP epitaxial planar type.Power amplifier complementary pair with 2SD2137. Features of 2SB1417 are:(1)high DC current gain(hFE) and good linearity;(2)low collector-emitter saturation saturat ion voltage(VCE(sat));(3)automatic m...

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SeekIC No. : 004221058 Detail

2SB1417: DescriptionThe 2SB1417 is a type of power transistor,which is silicon PNP epitaxial planar type.Power amplifier complementary pair with 2SD2137. Features of 2SB1417 are:(1)high DC current gain(hFE)...

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Part Number:
2SB1417
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Description


The 2SB1417 is a type of power transistor,which is silicon PNP epitaxial planar type.Power amplifier complementary pair with 2SD2137.

Features of 2SB1417 are:(1)high DC current gain(hFE) and good linearity;(2)low collector-emitter saturation saturat ion voltage(VCE(sat));(3)automatic mounting by radial taping is posible.

The absolute maximum ratings and electrical characteristics(Tc=25) of the 2SB1417 can be summarized as:(1):colle ctor-base voltage:-60V;(2):colletor-emitter voltage:-60V;(3):emitter-base voltage:-6V;(4):peak collector current:-5A;(5):collector current:-3A;(6):collector power dissipation(Tc=25):15W;(7):junction temperature:150 ;(8):storage temperature:-55 to 150.Electrical characteristics:(1):collector cutoff current(VCE=-60V,IE=0):-100uA max;(2):emit ter cutoff current(VEB=-6V,Ic=0):-100uA max;(3):DC current gain(VCE=-4V,IC=-1A):70min and 250 max;(4):base-em itter voltage(VCE=-4V,IC=-3A):-1.8V,etc.




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