2SB1418

DescriptionThe 2SB1418 is a type of power transistor,which is silicon PNP epitaxial planar darlington type.Power amplifier comp lementary pair with 2SD2137.Features of 2SB1418 are:(1)high DC current gain(hFE);(2)high speed switching;(3)auto matic mounting by radial taping is posible. The absolute...

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SeekIC No. : 004221059 Detail

2SB1418: DescriptionThe 2SB1418 is a type of power transistor,which is silicon PNP epitaxial planar darlington type.Power amplifier comp lementary pair with 2SD2137.Features of 2SB1418 are:(1)high DC current...

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Part Number:
2SB1418
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Description

The 2SB1418 is a type of power transistor,which is silicon PNP epitaxial planar darlington type.Power amplifier comp lementary pair with 2SD2137.Features of 2SB1418 are:(1)high DC current gain(hFE);(2)high speed switching;(3)auto matic mounting by radial taping is posible.

The absolute maximum ratings(Tc=25)  and electrical characteristics(Tc=25) of the 2SB1418 can be summarized as:(1):colle ctor-base voltage:-60V;(2):colletor-emitter voltage:-60V; (3):emitter-base voltage:-5V; (4):peak collector current:-4A; (5):collector current:-2A;(6):collector power dissipation(Tc=25):15W; (7):junction temperature:150 ;(8):storage temperature:-55 to 150.Electrical characteristics:(1):collector cutoff current(VCE=-60V,IE=0):-100uA max;(2):emitter cutoff current(VEB=-5V,Ic=0):-100uA max;(3):DC current gain(VCE=-4V,IC=-1A):1000min;(4):base-emitter voltage(VCE=-4V,IC=-2A):-2.8V;(5):collector-emittersaturation voltage(IC=-2V,IB=-8mA): -2.5V max;(6):turn-on time(IC=-2A,IBI=-8mA,IB2=8mA,VCC=-50V):0.2us typ;(7):turn-off time(IC=-2A,IBI=-8mA,IB2=8mA,VCC=-50V):2us typ,etc.

All in all, this is a simple description of 2SB1418. If you are interested in it,please pay more attention to our web!




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