2SB1474

The 2SB1474 is designed as one kind of medium power transistor (-80V, -4A) that has four points of features:(1)darlington connection for a high hFE;(2)complements the 2SD1933;(3)built-in resistor between base and emitter;(4)built-in damper diode. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD1898R can be summarized as:(1)collector-base voltage: -80 V V;(2)collector-emitter voltage: -80 V;(3)emitter-base voltage: -7 V;(4)collector current: -4 A or -6 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SB1474 can be summarized as:(1)collector-base breakdown voltage: -80 V;(2)collector-emitter breakdown voltage: -80 V;(3)emitter cutoff current: -3 mA;(4)collector-emitter saturation voltage: -1 V;(5)DC current transfer ratio: 5000;(6)transition frequency: 12 MHz;(7)output capacitance: 45 pF. If you want to know more information such as the electrical characteristics about the 2SB1474, please download the datasheet in www.seekic.com or www.chinaicmart.com.