2SB1481(Q)

The 2SB1481(Q) is one of the 2SB1481 series.The 2SB1481(Q) is a toshiba transistor ,silicon pnp epitaxial type.Features of the 2SB1481(Q) are:(1)high dc current gain:hFE=2000(Min.)(VCE=-2V,Ic=-1.5A); (2)low saturation voltage:VCE(sat)=-1.5V(Max.)(IC=-3A); (3)complementary to 2SD2241.

The absolute maximum ratings of the 2SB1481(Q) can be summarized as:(1)collector-to-base voltage:(-)100V; (2)collector-to-emitter voltage:(-)100V; (3)emitter-to-base voltage:(-)5V; (4)collector current(pulse):±6A; (5)collector current:±4A; (6)collector dissipation:2W;25W(Tc=25); (7)junction temperature:150; (8)storage temperature:-55~150.

The electrical characteristics at TA=25°C of the 2SB1481(Q) can be summarized as:(1)collector cut-off current:-2.0A; (2)emitter cut-off current:-2.5mA; (3)collector-emitter breakdown voltage:-100V; (4)dc current gain:2000(VCE=-2V,IC=-1.5A);1000(VCE=-2V,IC=-3A); (5)collector-emitter saturation voltage:-1.5V; (6)base-emitter saturation voltage:-2.0V; (7)switching time ;turn-on time:0.15s; (8)switching time ;storage time:0.80s; (9)switching time ;fall time:0.40s.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .