MFG:Other Category:Other
Category: Other
MFG: Other
Description: The 2SB1566E is designed as one kind of power transistor (-50V, -3A) that has three points of features:(1)low saturation ...
The 2SB1566E is designed as one kind of power transistor (-50V, -3A) that has three points of features:(1)low saturation voltage, typical VCE(sat)=-0.3 V at Ic/IB=-2A / -0.2A;(2)wide SOA (safe operating area);(3)complements the 2SD2395.
The absolute maximum ratings of the 2SB1566E can be summarized as:(1)collector-base voltage: -60 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -5 V;(4)collector current: -3 A or -4.5 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.
And the electrical characteristics of the 2SB1566E can be summarized as:(1)collector-base breakdown voltage: -60 V;(2)collector-emitter breakdown voltage: -50 V(3)emitter cutoff current: -1 uA;(4)collector-emitter saturation voltage: -1 V;(5)DC current transfer ratio: 100 to 320;(6)transition frequency: 60 MHz;(7)output capacitance: 40 pF;(8)base-emitter saturation voltage: -1.5 V. If you want to know more information such as the electrical characteristics about the 2SB1566E, please download the datasheet in www.seekic.com or www.chinaicmart.com.
2SB0621
PDF/DataSheet Download
The 2SB1566 features: ·With TO-220F package·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2395
The 2SB1565E is one of the 2SB1565 series.The 2SB1565E is a power transistor(-60,-3A).Features of the 2SB1565E are:(1)low saturation voltage,typically VCE(sat)=-0.3V at IC/IB=-2A/-0.2A; (2)excellent dc current gain characteristics; (3)wide SOA (safe operatin...
The 2SB1562 features: ·High DC Current Gain-: hFE= 300~1000@ (VCE= -5V , IC= -0.5A)·Low Saturation Voltage-: VCE(sat)= -0.5V(TYP.)@ (IC= -2A, IB= -20mA)
TRANS PNP 60V 2A SOT-89
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