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Part Number: 2SB1623

 

MFG: TOS

 

D/C: 06+

 

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2SB1623 Maximum Ratings

Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
-60
V
Collector to emitter voltage
VCEO
-60
V
Emitter to base voltage
VEBO
-5
V
Peak collector current
ICP
-8
A
Collector current
IC
-4
A
Collector power dissipation TC = 25°C
PC
40
W
Ta = 25°C
2.0
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
55 ~ +150
˚C

2SB1623 Features

High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Dielectric breakdown voltage of the package: > 5 kV

2SB1623 datasheet

2SB1623
PDF/DataSheet Download

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2SB1623 Relative Products

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    Features of the 2SB1617 are:(1)high DC current gain:hFE=2000(Min.);(2)low saturation voltage:VCE(sat)=-1.5V(Max.). The absolute maximum ratings of the 2SB1617 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the ratin...

  • 2SB1616

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    The 2SB1616 has 4 feature,that is,darlington connection for a high hFE;Built-in resistor between base and emitter;built-in damper doide;complements the 2SD2478. The 2SB1616s sector erase architecture allows any number of array sectors to be erased and re- p...

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    2SB1605

    The 2SB1605 features: ·With TO-220F package·Low collector saturation voltage·Good linearity of hFE

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