2SB1832

The 2SD1832 is designed as one kind of power transistor (120V, 6A) that has four points of features:(1)low saturation voltage, typically VCE(sat)=0.3V at Ic/IB=3A / 0.3A;(2)excellent DC current gain characteristics;(3)Pc=30W (Tc=25);(4)complements the 2SB1292.

The absolute maximum ratings of the 2SD1832 can be summarized as:(1)collector-base voltage: 80 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 5 V;(4)collector current: 5 A or 10 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SD1832 can be summarized as:(1)collector-base breakdown voltage: 80 V;(2)collector-emitter breakdown voltage: 60 V(3)emitter cutoff current: 10 uA;(4)collector-emitter saturation voltage: 1.0 V;(5)DC current transfer ratio: 100 to 320;(6)transition frequency: 8 MHz;(7)output capacitance: 130 pF. If you want to know more information such as the electrical characteristics about the 2SD1832, please download the datasheet in www.seekic.com or www.chinaicmart.com.