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2SC1306

Specifications Collector-Emitter Voltage (RBE = 150 Ohm), VCERCollector-Base Voltage, VCBOEmitter-Base Voltage, VEBOCollector Current, ICContinuous PeakCollector Power Dissipation (TA = +25°C), PDCollector Power Dissipation (TC = +50°C), PDOperating Junction Temperature, TJStorage Temperature...

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SeekIC No. : 004221564 Detail

2SC1306: Specifications Collector-Emitter Voltage (RBE = 150 Ohm), VCERCollector-Base Voltage, VCBOEmitter-Base Voltage, VEBOCollector Current, ICContinuous PeakCollector Power Dissipation (TA = +25°C),...

2SC1306 Data Sheet

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Part Number:
2SC1306
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Collector-Emitter Voltage (RBE = 150 Ohm), VCER

Collector-Base Voltage, VCBO

Emitter-Base Voltage, VEBO

Collector Current, IC

Continuous Peak

Collector Power Dissipation (TA = +25°C), PD

Collector Power Dissipation (TC = +50°C), PD

Operating Junction Temperature, TJ

Storage Temperature Range, Tstg
75V

80V

5V

3A

5A

1.2W

10W

+150°C
-55° to +150°C



Description

The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.


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