2SC1345(K)

      The 2SC1345(K) is designed as silicon NPN epitaxial whose typical applications is low frequency low noise amplifier.
      Some absolute maximum ratings of 2SC1345(K) (Ta = 25°C) have been concluded into several points as follow.The first one is about its collector to base voltage which would be 55 V.The second one is about its collector to emitter voltage which would be 50 V.The third one is about its emitter to base voltage which would be 5 V.The next one is about its collector current which would be 100 mA.The next one is about its collector power dissipation which would be 200 mW.The next one is about its junction temperature which would be 150 °C.The next one is about its storage temperature which would be from 55 to +150 °C.
      Also there are some absolute maximum ratings of 2SC1345(K) have been concluded into several points as follow.The first one is about its collector to base breakdown voltage which would be min 55 V with condition of Ic = 10 A, Ie = 0. The next one is about its collector to emitter breakdown voltage which would be min 50 V with condition of Ic = 1 mA. The next one is about its emitter to base breakdown voltage which would be min 5 V with conditions of Ie = 10 A, Ic = 0. The next one is about its collector cutoff current which would be max 0.5 A with condition of Vcb = 18 V, Ie = 0. The next one is about its emitter cutoff current which would be max 0.5 A with condition of Veb = 2 V, Ic = 0. The next one is about its DC current transfer ratio which would be min 250 and max 1200 with condition of Vce = 12 V, Ic = 2 mA. The next one is about its base to emitter voltage which would be max 0.75 V with condition of Vce = 12 V, Ic = 2 mA. The next one is about its collector to emitter saturation voltage which would be max 0.5 V with condition of Ic = 10 mA, Ib = 1 mA. And so on. For more information please contact us.