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2SC1590

Features: High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHzSpecifications Collector-Emitter Voltage (RBE = Infinity), VCEOCollector-Base Voltage, VCBOEmitter-Base Voltage, VEBOCol...

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SeekIC No. : 004221634 Detail

2SC1590: Features: High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHzSpecifications Colle...

2SC1590 Data Sheet

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Part Number:
2SC1590
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz


Specifications

Collector-Emitter Voltage (RBE = Infinity), VCEO
Collector-Base Voltage, VCBO
Emitter-Base Voltage, VEBO
Collector Current, IC
Collector Power Dissipation (TA = +25°C), PD
Collector Power Dissipation (TC = +50°C), PD
Operating Junction Temperature, TJ
Storage Temperature Range, Tstg
Thermal Resistance, Junction-to-Case, RthJC
Thermal Resistance, Junction-to-Ambient, RthJA
Electrical Characteristics: (TC = +25°C unless		 17V
35V
4V
12A
1.5W
12.5W
+150°C
-55° to +150°C
10°C/W
83°C/W



Description

The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.




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