2SC1623-T1B-A L5

The 2SC1623-T1B-A L5 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.

The absolute maximum ratings of 2SC1623-T1B-A L5 can be summarized as:(1)Collector to Base Voltage: 60 V;(2)Collector to Emitter Voltage: 50 V;(3)Emitter to Base Voltage: 5 V;(4)Collector Current to Continuous: 100 mA;(5)Collector Power Dissipation: 200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Collector to base breakdown voltage: 60 V;(2)Collector to emitter breakdown voltage: 50 V;(3)Collector cut to off current: 0.1 uA;(4)Emitter cut to off current: 0.1 uA;(5)DC current gain: 200 to 600;(6)Collector to emitter saturation voltage: 0.15 to 0.30 V;(7)Base to emitter saturation voltage: 0.55 to 0.65 V;(8)gain bandwidth product: 250 MHz. If you want to know more information about the 2SC1623-T1B-A L5, please download the datasheet in www.seekic.com or www.chinaicmart.com .