SpecificationsDescriptionThe 2SC1651C is one member of the 2SC1651 family which is designed as the high-voltage amplifier transistor (-210 V, -30 mA) device that has two points of features:(1)high breakdown voltage, (VCER = -210V ); (2)complements the 2SC1651S. The absolute maximum ratings of the...
2SC1651C: SpecificationsDescriptionThe 2SC1651C is one member of the 2SC1651 family which is designed as the high-voltage amplifier transistor (-210 V, -30 mA) device that has two points of features:(1)high b...
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The 2SC1651C is one member of the 2SC1651 family which is designed as the high-voltage amplifier transistor (-210 V, -30 mA) device that has two points of features:(1)high breakdown voltage, (VCER = -210V ); (2)complements the 2SC1651S.
The absolute maximum ratings of the 2SC1651C can be summarized as:(1)Collector-base voltage: -210 V;(2)Collector-emitter voltage: -210 V;(3)Emitter-base voltage: -5 V;(4)Collector current: -30 A;(5)Collector power dissipation: 0.25 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: -210 V;(2)Collector-emitter breakdown voltage: -210 V;(3)Emitter-base breakdown voltage: -5 V;(4)Collector cutoff current: - uA;(5)Emitter cutoff current: -1 uA;(6)DC current transfer ratio: 82;(7)Collector-emitter saturation voltage: -1 V;(8)Transition frequency: 50 to 270 MHz;(9)Output capacitance: 8.0 pF. If you want to know more information such as the electrical characteristics about the 2SC1651C, please download the datasheet in www.seekic.com or www.chinaicmart.com.