2SC1850

The 2SC1850 is designed as one kind of silicon NPN epitaxial planar type (PCT process) that can be used in high frequency amplifier and FM, RF, MIX, IF amplifier applications. And the two points of features of this device are:(1)small reverse transfer capacitance: Cre = 0.7 pF (typ.);(2)low noise figure: NF = 2.5 dB (typ.) (f=100 MHz).

The absolute maximum ratings of the 2SC1850 can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 50 V;(3)emitter-base voltage: 5 V;(4)collector current: 200 mA;(5)collector power dissipation: 350 mW;(6)junction temperature: 135 ;(7)storage tmeperature range: -55 to +135 . If you want to know more information such as the electrical characteristics about the 2SC1850, please download the datasheet in www.seekic.com or www.chinaicmart.com .