2SC1942N

The 2SC1942N is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)high power gain: Gpe>/= 11 dB @ Vcc = 12 V, f = 27 MHz, Po=13 W;(2)good linearity;(3)emitter ballasted construction for good performances;(4)TO-220 package similarly is combinient for mounting.

The absolute maximum ratings of the 2SC1942N can be summarized as:(1)storage temperature: -45 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation: 50 W;(4)collector to base voltage: 1500 V;(5)collector to emitter voltage: 800 V;(6)emitter to base voltage: 6.0 V;(7)collector current: 6 A.

And the electrical characteristics of the 2SC1942N can be summarized as:(1)collector cut off current: 0.5 mA;(2)emitter cut off current: 0.1 mA;(3)collector-base voltage:800 V;(4)collector-emitter voltage: 6 V;(5)collector-emitter saturation voltage: 40 V;(6)base-emitter saturation voltage: 5 V;(7)DC current gain: 10 to 180. If you want to know more information such as the electrical characteristics about the 2SC1942N, please download the datasheet in www.seekic.com or www.chinaicmart.com .