2SC1946

The 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Features of the 2SC1946 are:(1)high power gain:Gpe6.7dB @ VCC=13.5V,Po=28W,f=175MHz;(2)emitter ballasted construction for high reliability and good performances;(3)low thermal resistance ceramic package with flange;(4)ability of withstanding infinite load VSWR when operated at VCC=15.2V,Po=30W,f=175MHz.

The absolute maximum ratings of the 2SC1946 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 35,the unit is V;(2):the characteristic is collector-emittre voltage,the symbol is VCEO,the rating is 17,the unit is V;(3):the characteristic is emitter-base voltage,the symbol is VEBO,the rating is 4,the unit is V;(4):the characteristic is collector current,the symbol is IC,the rating is 7,the unit is A;(5):the characteristic is collector power dissipation Ta=25,the symbol is PC,the rating is 3,the unit is W;(6):the characteristic is collector power dissipation Tc=25,the symbol is PC,the rating is 50,the unit is W;(7):the characteristic is junction temperature,the symbol is Tj,the rating is 175,the unit is ;(8):the characteristic is storage temperature range,the symbol is Tstg,the rating is -65 to 175,the unit is ;(9):the characteristic is thermal resistance junction to ambient,the symbol is Rth-a,the rating is 50,the unit is /W;(10):the characteristic is thermal resistance junction to case,the symbol is Rth-c,the rating is 3,the unit is /W.