2SC2412KT146R

Transistors Bipolar (BJT) NPN 50V 0.15A

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SeekIC No. : 00206681 Detail

2SC2412KT146R: Transistors Bipolar (BJT) NPN 50V 0.15A

floor Price/Ceiling Price

US $ .04~.17 / Piece | Get Latest Price
Part Number:
2SC2412KT146R
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.17
  • $.1
  • $.07
  • $.04
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.15 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single
Maximum Operating Frequency : 180 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-59
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Package / Case : SC-59
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 180 MHz
DC Collector/Base Gain hfe Min : 120
Maximum DC Collector Current : 0.15 A


Specifications

  Connection Diagram


Description

The 2SC2412KT146R is one member of the 2SC2412 family which is designed as the NPN silicon general purpose transistor device that has four points of features:(1)low Cob; (2)Cob=2.0 pF; (3)compements the 2SA1037K; (4)RoHS compliant product. And this device has the structure of NPN silicon teansistor and expitaxial planar type.

The absolute maximum ratings of the 2SC2412KT146R can be summarized as:(1)Collector-base voltage: 60 V;(2)Collector-emitter voltage: 50 V;(3)Emitter-base voltage: 7 V;(4)Collector current: 0.15 A;(5)Collector power dissipation: 0.2 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SC2412KT146R can be summarized as:(1)Collector-base breakdown voltage: 60 V;(2)Collector-emitter breakdown voltage: 50 V;(3)Emitter-base breakdown voltage: 7 V;(4)Collector cutoff current: 0.1 uA;(5)Emitter cutoff current: 0.1 uA;(6)DC current transfer ratio: 120 to 560;(7)Collector-emitter saturation voltage: 0.4 V;(8)Transition frequency: 180 MHz;(9)Output capacitance: 2 to 3.5 pF. If you want to know more information such as the electrical characteristics about the 2SC2412KT146R, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SC2412KT146R
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)150mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Frequency - Transition180MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SC2412KT146R
2SC2412KT146R
2SC2412KT146RTR ND
2SC2412KT146RTRND
2SC2412KT146RTR



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