2SC2510

DescriptionFeatures of the 2SC2510 are:(1)specified 28V,28MHz,characteristics;(2)output power:Po=150WPEP(Min.);(3)power gain:Gp=12.2dB(Min.);(4)collector efficiency:C=35%(Min.);(5)intermodulation distortion:IMD=-30dB(Max.). The absolute maximum ratings of the 2SC2510 can be summarized as:(1):the ...

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SeekIC No. : 004221924 Detail

2SC2510: DescriptionFeatures of the 2SC2510 are:(1)specified 28V,28MHz,characteristics;(2)output power:Po=150WPEP(Min.);(3)power gain:Gp=12.2dB(Min.);(4)collector efficiency:C=35%(Min.);(5)intermodulation di...

floor Price/Ceiling Price

Part Number:
2SC2510
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Description

Features of the 2SC2510 are:(1)specified 28V,28MHz,characteristics;(2)output power:Po=150WPEP(Min.);(3)power gain:Gp=12.2dB(Min.);(4)collector efficiency:C=35%(Min.);(5)intermodulation distortion:IMD=-30dB(Max.).

The absolute maximum ratings of the 2SC2510 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 60,the unit is V;(2):the characteristic is collector-emitter voltage,the symbol is VCES,the rating is 60,the unit is V;(3):the characteristic is collector-emitter voltage,the symbol is VCEO,the rating is 35,the unit is V;(4):the characteristic is cemitter-base voltage,the symbol is VEBO,the rating is 4,the unit is V;(5):the characteristic is collector current,the symbol is IC,the rating is 20,the unit is A;(6):the characteristic is collector power dissipation,the symbol is PC,the rating is 250,the unit is W;(7):the characteristic is junction temperature,the symbol is Tj,the rating is 175,the unit is ;(8):the characteristic is storage temperature range,the symbol is Tstg,the rating is -65 to 175,the unit is .

The electrical characteristics of the 2SC2510 can be summarized as:(1):the characteristic is collector-emitter breakdown voltage,the symbol is V(BR)CEO,the Min is 35,the unit is V;(2):the characteristic is emitter-base breakdown voltage,the symbol is V(BR)EBO,the Min is 4,the unit is V;(3):the characteristic is collector-emitter breakdown voltage,the symbol is V(BR)CES,the Min is 55,the unit is V;(4):the characteristic is DC current gain,the symbol is hFE,the Min is 10;(5):the characteristic is collector output capacitance,the symbol is Cob,the Typ is 450,the Max is 600,the unit is pF;(6):the characteristic is power gain,the symbol is Cp,the Min is 12.2,the Typ is 13.3,the unit is dB;(7):the characteristic is input power,the symbol is Pi,the Typ is 7,the Max is 9,the unit is WPEP;(8):the characteristic is collector efficiency,the symbol is C,the Min is 35,the unit is %;(9):the characteristic is intermodulation distortion,the symbol is IMD,the Max is -30,the unit is dB;(10):the characteristic is series equivalent input impedance,the symbol is Zin,the Typ is 1.4,-j0.9,the unit is ;(11):the characteristic is series equivalent output impedance,the symbol is Zout,the Typ is 2.3,-j0.9,the unit is .


 




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