2SC2510A

Application`Specified 28V, 28MHz Characteristics `Output Power : Po = 150W(Min.) `PEP Power Gain : Gp = 12.2dB (Min.) `Collector Efficiency :C= 35% (Min.)`Intermodulation Distortion : IMD = 30dB (Max.) Specifications Characteristic Symbol Rating Unit Collector-base voltage ...

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SeekIC No. : 004221925 Detail

2SC2510A: Application`Specified 28V, 28MHz Characteristics `Output Power : Po = 150W(Min.) `PEP Power Gain : Gp = 12.2dB (Min.) `Collector Efficiency :C= 35% (Min.)`Intermodulation Distortion : IMD = 30dB (Ma...

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Part Number:
2SC2510A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Application

`Specified 28V, 28MHz Characteristics  
`Output Power  : Po = 150W (Min.)
`PEP  Power Gain   : Gp = 12.2dB (Min.)  
`Collector Efficiency :  C= 35% (Min.) 
`Intermodulation Distortion : IMD = 30dB (Max.)



Specifications

Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEX
60
V
Collector-emitter voltage
VCEO
35
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
A
Collector power dissipation
PC
250
W
Junction temperature
Tj
175
Storage temperature range
Tstg
-65~175


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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