2SC2540

The 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

The 2SC2540 has 4 features.The first one is high power gain:Gpe 8.2dB @ Vcc=13.5V,Po=40W,f=175MHz.The second one is emitter ballasted construction and gold metallization for high reliability and good performances.The third one is low thermal resistance ceramic package with flange.The fourth one is ability of withstance more than 20:1 load VSWR when operated at Vcc=15.2V,Po=40W,f=175MHz,Tc=25 .

The 2SC2540 has some absolute maximum rating(Tc=25 unless otherwise specified).When symbol is VCBO,the parameter is collector to base voltage,the rating is 35,the unit is V.When symbol is VEBO,the parameter is emitter to base voltage,the rating is 4,the unit is V.When symbol is VCEO,the parameter is collector voltage,the rating is 17,the unit is V.When symbol is IC,the parameter is collector cuurent,the rating is 10,the unit is A.When symbol is Pc,the parameter is collector dissipation,the condition Ta=25,the rating is 4.5,the unit is W.When symbol is Pc,the parameter is collector dissipation,the condition Tc=25,the rating is 80,the unit is W.When symbol is TI,the parameter is juction temperature,the rating is 175,the unit is .When symbol is Tstg,the parameter is storage temperature,the rating is -55 to 175,the unit is .When symbol is Rth-B,the paraeter is thermal resistance,the conditions is junction to ambient,the rating is 33.3,the unit is /W.When symbol is Rth-C,the paraeter is thermal resistance,the conditions is junction to case,the rating is 2,the unit is /W.